| Title: | Pełny pionowo zintegrowany łańcuch technologiczny dla pionowej elektroniki GaN-on-GaN: od podłoża GaN do Inteligentnego Banku Energii |
| Project leader: | Izabella Grzegory |
| Laboratory: | Semiconductor Physics Laboratory (NL-2) |
| Call/Programme name: | TECHMATSTRATEG |
| Project number: | TECHMATSTRATEG-III/0003/2019 |
| Implementation date: | 01.01.2021 30.06.2025 |
| Implementing entity: | Institute of High Pressure Physics |
| Total funding granted: | 19 614 701.58 zł |
| Funding for the entity: | 6 877 500 zł |
| Funding institution: | National Center for Research and Development |
Project description
| The main goal of the EnerGaN proposal is preparing for implementation all necessary elements of vertically integrated technological chain to start in Poland, the production of energy efficient Intelligent Energy Banks – IEB. The IEB wil be based on energy flow control systems with efficient, high energy density, miniaturized converters supplied with artificial intelligence allowing charge/discharge decision making in an autonomic way. For IEB, the vertical transistor technology based on gallium nitride (GaN) will be developed and implemented. Due to its outstanding figures of merits, GaN is an optimum semiconductor for high power high frequency transistors for distribution and energy transfer systems. The systems based on GaN devices will be energy saving, reliable and miniaturized in comparison to existing Si-based solutions. The EnerGaN consortium has all elements necessary for development of vertically integrated technology chain for relevant transistors and energy storage intelligent control systems: 1. single crystalline GaN substrates – the highest quality worldwide what is crucial for high power vertical devices – pilot production – IWC PAN 2. epitaxial layer structures – state of art, laboratory scale, - IWC PAN 3. semiconductor devices processing – state of the art, laboratory scale – Sieć Badawcza Łukasiewicz - ITE 4. high power control systems – state of the art for Si-based electronic devices – DACPOL Ltd. 5. algorithms and software for artificial intelligence systems – Inwebit Ltd. Some of the elements like native GaN substrates or post-implantation high pressure processing of transistor structures are competitive advantages in a global scale. END USERS For Intelligent Energy Banks: energy clusters, micro-networks For GaN substrates: producers of electronic and optoelectronic devices |