MBE research group is a part of the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) "Unipress".
We focus on the development of blue and green light-emitting diodes (LEDs) and laser diodes (LDs) using plasma-assisted molecular beam epitaxy (PAMBE). We carry out the research on long-wavelength light emitters: implement improvements in structure design and optimize optical and electrical parameters of gallium nitride (GaN) based devices. We investigate crystal growth mechanisms on GaN surfaces of various polarity and crystallographic orientation. We fabricate and study nitride heterostructures with tunnel junction. We also study vertical heterojunction transistors n-p-n (GaN/InGaN/GaN) fabricated on GaN substrates using MBE.
We are happy to announce that the project of our colleague Dr. Marta Sawicka was on the first place in the ranking list in the competition SMALL GRANT SCHEME, published on May 7, 2021 by the National Center for Research and Development
The project entitled 'Buried periodic Arrays of NANOchannels for single-frequency nitride lasers' will exploit the synergy of several advanced technologies in order to develop GaN-based lasers of single-frequency spectrum (DFB LDs). The innovation of the proposed approach is related to positioning an efficient diffraction grating inside the structure. It will be possible thanks to the use of electron lithography, silicon implantation and electrochemical etching. The diagram of the device is presented in the graphic below (author Mateusz Hajdel).
Mikołaj Żak and our colleagues published an interesting paper on nitride tunnel junctions fabricated by molecular beam epitaxy Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices in Physical Review Applied. The paper proposes a method of producing GaN: Mg / InGaN: Mg + / InGaN: Si + / GaN: Si doped tunnel junctions with record-low series resistance while maintaining high quality of the structures. The experimental results of the measured tunneling current were supported by calculations in the k · p Kane model taking into account the realistic distribution of electric fields in the junction structure. An important element in explaining the compliance of the theoretical model with the experimental results of the tunneling effects was the analysis of the structure of the GaN valence band and the adoption of the correct effective mass for holes involved in tunneling.
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction By: K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S, Grzanka, C. Skierbiszewski, T. Suski OPTICS EXPRESS Vol: 29 Issue: 2, pp: 1824-1837 (2021) Publishde 18January 2021 doi: 10.1364/OE.415258
Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices By: M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski Phys. Rev. Applied 15, 024046 – Published 19 February 2021 doi.org/10.1103/PhysRevApplied.15.024046
Nitride light-emitting diodes for cryogenic temperatures By: M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski OPTICS EXPRESS, Volume: 28, Issue: 20, Pages: 30299-30308, Published: SEP 28 2020 10.1364/OE.403906
InGaN blue light emitting micro-diodes with current path defined by tunnel junction By: K. Gibasiewicz, A. Bojarska-Cieslinska, G. Muziol, C. Skierbiszewski, S.Grzanka, A. Kafar, P. Perlin, S. Najda, T. Suski, OPTICS LETTERS, Volume: 45, Issue: 15, Pages: 4332-4335, Published: AUG 1 2020 10.1364/OL.394629
Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 1481 (2020)10.3390/electronics9091481
Current list of our projects:
„Tunnel junction and its applications for GaN based optoelectronics”
"Monolithic integration of superconductors and semiconductors on nitride platform”
"Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes.”
“Nitride based distributted feedback laser diodes”
"Development of high quality InAlN – the road to strain-free nitride lasers."
"Polarity engineering in nitride heterostructures"
"Circumvention of piezoelectric fields in III-nitride heterostructures – a way towards solving the green gap problem"
"Nanoporous GaN – a new platform for realization of quantum structures"
"Influence of build-in piezoelectric fields on performance of nitride laser diodes"
"Monolithic bipolar junction transistor driving LED in group III nitrides material system"
List of completed projects HERE
Video (only Polish language version) recorded in 2014 - “Patent na Patent”:
From this short video you can learn about Grzegorz Muzioł PhD thesis (4:10). He explains the role of InGaN laser diode waveguide design on the optical mode leakage to GaN substrate (5:08). You can hear Prof. Czesław Skierbiszewski tellinng about the properties and applications of gallium nitride (3:25), and Prof. Piotr Perlin (TopGaN CTO) stressing the importance of innovative research for polish hi-tech business (8:34).
Institute of High Pressure Physics
Polish Academy of Sciences "UNIPRESS"
MBE LAB location:
al. Prymasa Tysiąclecia 98
PKP Koło - tram stop
Obozowa - bus stop
+48 22 8760351 - office
+48 22 8760324 - lab